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| APM2509NU N-Channel Enhancement Mode MOSFET Features * 25V/50A , RDS(ON)=7.5m(typ.) @ VGS=10V RDS(ON)=13m(typ.) @ VGS=4.5V Pin Description * * * * Super High Dense Cell Design Avalanche Rated Reliable and Rugged Lead Free Available (RoHS Compliant) D Top View of TO-252 Applications * G Power Management in Desktop Computer or DC/DC Converters S N-Channel MOSFET Ordering and Marking Information APM2509N Lead Free Code Handling Code Temp. Range Package Code Package Code U : TO-252 Operating Junction Temp. Range C : -55 to 150 C Handling Code TU : Tube TR : Tape & Reel Lead Free Code L : Lead Free Device Blank : Original Device XXXXX - Date Code APM2509N U : APM2509N XXXXX Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright (c) ANPEC Electronics Corp. Rev. B.4 - Jul., 2005 1 www.anpec.com.tw APM2509NU Absolute Maximum Ratings Symbol Parameter Rating 25 20 150 -55 to 150 TC=25C TC=25C TC=100C TC=25C TC=100C TC=25C TC=100C 30 100 65 50* 38 50 20 2.5 W C/W V C C A Unit Common Ratings (TA=25C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP ID PD RJC 300s Pulse Drain Current Tested Continuous Drain Current Maximum Power Dissipation Thermal Resistance-Junction to Case 2 A A Mounted on PCB of 1in Pad Area IDP ID PD RJA 300s Pulse Drain Current Tested Continuous Drain Current Maximum Power Dissipation Thermal Resistance-Junction to Ambient TA=25C TA=100C TA=25C TA=100C TA=25C TA=100C TA=25C TA=100C TA=25C TA=100C TA=25C TA=100C 100 65 13 8 2.5 1 50 100 65 10.5 6 1.6 0.6 75 W C/W W C/W A A Mounted on PCB of Minimum Footprint IDP ID PD RJA Note: * Current limited by bond wire. 300s Pulse Drain Current Tested Continuous Drain Current Maximum Power Dissipation Thermal Resistance-Junction to Ambient A A Copyright (c) ANPEC Electronics Corp. Rev. B.4 - Jul., 2005 2 www.anpec.com.tw APM2509NU Electrical Characteristics Symbol Parameter (TA = 25C unless otherwise noted) APM2509NU Min. Typ. Max. Test Condition Unit Drain-Source Avalanche Ratings EAS BVDSS IDSS VGS(th) IGSS RDS(ON) a Avalanche Energy, Single Pulsed ID=15A, L=0.5mH 25 50 mJ Static Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance VGS=0V, IDS=250A VDS=20V, VGS=0V TJ=85C VDS=VGS, IDS=250A VGS=20V, VDS=0V VGS=10V, IDS=30A VGS=4.5V, IDS=15A ISD=10A, VGS=0V ISD=10A, dISD/dt =100A/s 7.5 13 1.3 1.8 V 1 30 2.5 100 9 18 A V nA m Diode Characteristics VSDa trr b b Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge b 0.9 17 6 1.1 V ns nC pF Qrr Dynamic Characteristics RG Ciss Coss Crss td(ON) Tr td(OFF) Tf Qg Qgs Qgd Notes: Gate Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=15V, Frequency=1.0MHz 1.8 1560 345 245 17 18 41 16 VDD=15V, RL=15, IDS=1A, VGEN=10V, RG=6 ns Gate Charge Characteristics b Total Gate Charge Gate-Source Charge Gate-Drain Charge a : Pulse test ; pulse width300s, duty cycle2%. b : Guaranteed by design, not subject to production testing. 17.5 VDS=15V, VGS=4.5V, IDS=30A 5 11 nC Copyright (c) ANPEC Electronics Corp. Rev. B.4 - Jul., 2005 3 www.anpec.com.tw APM2509NU Typical Characteristics Power Dissipation 60 60 Drain Current 50 50 ID - Drain Current (A) o Ptot - Power (W) 40 40 30 30 20 20 10 TC=25 C 0 20 40 60 80 100 120 140 160 180 10 TC=25 C,VG=10V 0 20 40 60 80 100 120 140 160 180 o 0 0 Tj - Junction Temperature (C) Tj - Junction Temperature (C) Safe Operation Area Normalized Transient Thermal Resistance 300 100 Thermal Transient Impedance 2 1 Duty = 0.5 0.2 Rd s(o n) Lim it ID - Drain Current (A) 10ms 100ms 10 1s 0.1 0.02 0.01 0.1 0.05 DC 1 0.01 Single Pulse Tc=25 C 0.1 0.1 o 1 10 70 1E-3 1E-4 1E-3 Mounted on 1in pad o RJA :50 C/W 2 0.01 0.1 1 10 100 VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec) Copyright (c) ANPEC Electronics Corp. Rev. B.4 - Jul., 2005 4 www.anpec.com.tw APM2509NU Typical Characteristics (Cont.) Output Characteristics 100 90 80 VGS=4,5,6,7,8,9,10V Drain-Source On Resistance 22 20 RDS(ON) - On - Resistance (m) 18 16 14 12 10 8 6 4 VGS=10V VGS=4.5V ID - Drain Current (A) 70 60 50 40 30 20 3.5V 3V 2.5V 10 0 0.0 0.4 0.8 1.2 1.6 2.0 2 0 20 40 60 80 100 VDS - Drain-Source Voltage (V) ID - Drain Current (A) Transfer Characteristics 100 90 Gate Threshold Voltage 1.6 IDS =250A 1.4 80 ID - Drain Current (A) 70 60 50 40 30 20 10 0 0 1 Tj=125 C o Normalized Threshold Voltage 6 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 Tj=25 C Tj=-55 C o o 2 3 4 5 0 25 50 75 100 125 150 VGS - Gate - Source Voltage (V) Tj - Junction Temperature (C) Copyright (c) ANPEC Electronics Corp. Rev. B.4 - Jul., 2005 5 www.anpec.com.tw APM2509NU Typical Characteristics (Cont.) Drain-Source On Resistance 1.8 VGS = 10V 1.6 IDS = 30A 10 40 Source-Drain Diode Forward Normalized On Resistance IS - Source Current (A) 1.4 1.2 1.0 0.8 0.6 RON@Tj=25 C: 7.5m 0.4 -50 -25 0 25 50 75 100 125 150 o Tj=150 C o 1 Tj=25 C o 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Tj - Junction Temperature (C) VSD - Source-Drain Voltage (V) Capacitance 3000 Frequency=1MHz Gate Charge 10 9 VDS=15V ID = 30A VGS - Gate-source Voltage (V) 25 2500 8 7 6 5 4 3 2 1 C - Capacitance (pF) 2000 Ciss 1500 1000 500 Crss 0 0 5 Coss 10 15 20 0 0 5 10 15 20 25 30 35 VDS - Drain - Source Voltage (V) QG - Gate Charge (nC) Copyright (c) ANPEC Electronics Corp. Rev. B.4 - Jul., 2005 6 www.anpec.com.tw APM2509NU Avalanche Test Circuit and Waveforms V DS L DUT tp V DSX(SUS) V DS IAS RG V DD V DD tp IL 0.01 EAS tAV Switching Time Test Circuit and Waveforms V DS RD DUT V GS RG V DD 10% tp V DS 90% V GS td(on) tr td(off) tf Copyright (c) ANPEC Electronics Corp. Rev. B.4 - Jul., 2005 7 www.anpec.com.tw APM2509NU Packaging Information TO-252( Reference JEDEC Registration TO-252) E b2 L2 A C1 D H L1 L b e1 C A1 Dim A A1 b b2 C C1 D E e1 H L L1 L2 Millimeters Min. 2.18 0.89 0.508 5.207 0.46 0.46 5.334 6.35 3.96 9.398 0.51 0.64 0.89 1.02 2.032 8 Inches Max. 2.39 1.27 0.89 5.461 0.58 0.58 6.22 6.73 5.18 10.41 Min. 0.086 0.035 0.020 0.205 0.018 0.018 0.210 0.250 0.156 0.370 0.020 0.025 0.035 0.040 0.080 www.anpec.com.tw Max. 0.094 0.050 0.035 0.215 0.023 0.023 0.245 0.265 0.204 0.410 Copyright (c) ANPEC Electronics Corp. Rev. B.4 - Jul., 2005 APM2509NU Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) TP Ramp-up tp Critical Zone T L to T P Temperature TL Tsmax tL Tsmin Ramp-down ts Preheat 25 t 25 C to Peak Time Classification Reflow Profiles Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Time maintained above: - Temperature (T L) - Time (tL) Peak/Classificatioon Temperature (Tp) Time within 5C of actual Peak Temperature (tp) Ramp-down Rate Sn-Pb Eutectic Assembly 3C/second max. 100C 150C 60-120 seconds 183C 60-150 seconds See table 1 10-30 seconds Pb-Free Assembly 3C/second max. 150C 200C 60-180 seconds 217C 60-150 seconds See table 2 20-40 seconds 6C/second max. 6C/second max. 6 minutes max. 8 minutes max. Time 25C to Peak Temperature Notes: All temperatures refer to topside of the package .Measured on the body surface. 9 www.anpec.com.tw Copyright (c) ANPEC Electronics Corp. Rev. B.4 - Jul., 2005 APM2509NU Classification Reflow Profiles(Cont.) Table 1. SnPb Entectic Process - Package Peak Reflow Temperature s 3 3 Package Thickness Volume mm Volume mm <350 350 <2.5 mm 240 +0/-5C 225 +0/-5C 2.5 mm 225 +0/-5C 225 +0/-5C Table 2. Pb-free Process - Package Classification Reflow Temperatures 3 3 3 Package Thickness Volume mm Volume mm Volume mm <350 350-2000 >2000 <1.6 mm 260 +0C* 260 +0C* 260 +0C* 1.6 mm - 2.5 mm 260 +0C* 250 +0C* 245 +0C* 2.5 mm 250 +0C* 245 +0C* 245 +0C* *Tolerance: The device manufacturer/supplier shall assure process compatibility up to and including the stated classification temperature (this means Peak reflow temperature +0C. For example 260C+0C) at the rated MSL level. Reliability Test Program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245C,5 SEC 1000 Hrs Bias @ 125C 168 Hrs, 100% RH, 121C -65C ~ 150C, 200 Cycles Carrier Tape & Reel Dimensions t E Po P P1 D F W Bo Ao D1 Ko Copyright (c) ANPEC Electronics Corp. Rev. B.4 - Jul., 2005 10 www.anpec.com.tw APM2509NU Carrier Tape & Reel Dimensions(Cont.) T2 J C A B T1 Application A 330 3 B 100 2 D 1.5 +0.1 C 13 0. 5 D1 J 2 0.5 Po T1 16.4 + 0.3 -0.2 P1 2.0 0.1 T2 2.5 0.5 Ao 6.8 0.1 W 16+ 0.3 - 0.1 Bo 10.4 0.1 P 8 0.1 Ko 2.5 0.1 E 1.75 0.1 t 0.30.05 TO-252 F 7.5 0.1 1.5 0.25 4.0 0.1 (mm) Cover Tape Dimensions Application TO- 252 Carrier Width 16 Cover Tape Width 13.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright (c) ANPEC Electronics Corp. Rev. B.4 - Jul., 2005 11 www.anpec.com.tw |
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